Lin RM

Lin, Ray-Ming ,Ph.D.
Institution: Chang Gung University
Position: Professor
Department: Department of Electronic Engineering
Address: 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan County,33302,Taiwan, (R.O.C.)
Tel: +886-3-2118800 ext.5790 Fax: +886-3-2118507
E-mail: rmlin@mail.cgu.edu.tw

Focus of Interest:

• Nitride-based Epitaxy
• Opto-Electronic Material and Device
• GaN High Power Device

Fulltime Employment:

• Associate Research Fellow, Planning and Evaluation Division, National Science Council, Taiwan (1997-1999).
• Assistant Professor, Dept. of Electronic Engineering, Chang Gung University, Taiwan (1999-2002).
• Associate Professor, Dept. of Electronic Engineering, Chang Gung University, Taiwan (2002-2013)
• Director, Right and Technology Transfer Center, Chang Gung University (2001-2006).
• Convener, Green Technology Research Center, Chang Gung University (2010-2012).

Education:

• Ph. D. Electrical Engineering at National Taiwan University (1994-1997)

Honor and Awards:

1. Chang Gung University Research Award (2002)
2. Chang Gung University Technical Cooperation Award (2010)
3. Research covered by 『Compound Semiconductor』, 『 Semiconductor Today 』and 『 VerticalNews Electronics 』Magazine
   • Compound Semiconductor, Sep 28, 2010: "Electron blocker boosts brightness in wide well LEDs"
   • Semiconductor Today, January 27, 2011: "Exploring droop and wide well nitride LEDs"
   • Compound Semiconductor, Feb 11, 2011: "Electron leakage can improve efficiency droop"
   • Semiconductor Today, Sep 6, 2012: "Layer insertion to avoid nitride LED efficiency droop"
   • Compound Semiconductor, Oct 12, 2012: " Inserting InGaN slashes LED droop "
   • Semiconductor Today, Oct 29, 2013: "Palladium oxide interlayer cuts gate leakage in nitride HEMTs"
   • VerticalNews Electronics, Oct 30, 2013: "Physical and Electrical Characteristics of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors With Rare Earth Er2O3 as a Gate Dielectric "

Selected Main Publications:

1. Ray-Ming Lin* and Jen-Chih Li, “Side wall wet etching improves the efficiency of gallium nitride light emitting diodes”, Journal of the Electrochemical Society, Vol. 159 Issue 4, pp. H433-H439 (2012).
2. Ray-Ming Lin*, Sheng-Fu Yu, Shoou-Jinn Chang, Tsung-Hsun Chiang, Sheng-Po Chang, and Chang-ho Chen, “Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes” APPLIED PHYSICS LETTERS, Vol.101, pp.081120, 24 August (2012).
3. Jui-Fen Chien , Hua-Yang Liao, Sheng-Fu Yu,Ray-Ming Lin, Makoto Shiojiri, Jing-Jong Shyue, and Miin-Jang Chen, Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique, ACS Applied Materials and Interfaces, Vol. 5 Issue 2, pp. 227-232, (2013).
4. Atanu Dasa, Danny Hsu Koa, Chia-Hsin Chena, Liann-Be Chang, Chao-Sung Laia, Fu-Chuan Chua, Lee Chowb, Ray-Ming Lin*, “Highly Sensitive Palladium Oxide Thin Film Extended Gate FETs as pH Sensor”, Sensors and Actuators B 205 (2014) 199–205, September 2014, Sensors and Actuators B: Chemical (2014).
5. Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, Yu-Pin Lan, Ching-Hsueh Chiu, Gou-Chung Chi,Chi-Hsiang Chen, Hao-Chung Kuo, Ray-Ming Lin* and Chun-Yen Chang, “Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate”, Nanoscale Research Letters, 9:505,Sep. (2014).

All Publications List

Board Certification:

Ongoing projects: