Expertise at Chang Gung System

Chang, Ruey-Dar ,Ph.D.
Institution: Chang Gung University
Position: Professor
Department: Department of Electronic Engineering
Address: 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan County,33302,Taiwan, (R.O.C.)
Tel: +886-3-2118800 ext. 5782 Fax: +886-3-2118507
E-mail: crd@mail.cgu.edu.tw

Focus of Interest:
  • Modeling and design of semiconductor processing and devices

Fulltime Employment:
  • 2009-present Associate Professor, Department of Electronic Engineering, Chang Gung University.
  • 2006-present Director, Center for Technology Licensing and Patenting, Chang Gung University.
  • 1998-2009 Assistant Professor, Department of Electronic Engineering, Chang Gung University.
  • 1995-1998 Graduate Student Research Assistant, University of Texas, Austin.
  • 1994-1995 Senor Device Engineer, Vanguard International Semiconductor Corporation, responsible for TCAD and DRAM device design.
  • 1990-1994 Device Engineer, Industrial Technology Research Institute (ITRI), responsible for TCAD process simulation in Submicron Project.

Education:
  • Ph.D., 1998 University of Texas at Austin, Electrical Engineering, U.S.A.
  • M.S., 1990 National Chiao Tung University, Electronics, Taiwan.
  • B.S., 1988 National Cheng Kung University, Materials Engineering, Taiwan.

Honor and Awards:

Selected Main Publications:
  1. Y. T. Ling, M. J. Huang, R. D. Chang*, and L. Pelaz, “Codiffusion of phosphorus and carbon in preamorphized ultrashallow junctions”, Electrochem. Solid-State Lett. Vol. 15, p. H202, 2012.
  2. C. C. Ma, F. H. Hsieh, Y. W. Wu, and R. D. Chang*, “Experimental and simulation studies of solid-phase crystallization of fluorine-implanted amorphous silicon on silicon dioxide”, Jpn. J. Appl. Phys. Vol. 50, p. 091403, 2011.
  3. R. D. Chang* and J. R. Tsai, “Loss of phosphorus due to segregation at Si/SiO2 interfaces: Experiment and modeling”, J. Appl. Phys. Vol. 103, p. 053517, 2008.
  4. R. D. Chang*, J. R. Tsai, and L. W. Ho, "Elucidating the mechanism of transient loss of phosphorus due to interface segregation", Appl. Phys. Lett. Vol. 88, p. 211914, 2006.
  5. R. D. Chang*, P. S. Choi, D. L. Kwong, D. Wristers and P. K. Chu, "Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion", Appl. Phys. Lett. Vol. 72, p. 1709, 1998.

All Publications List

Board Certification:

Ongoing projects: