專業人才

麥 凱 ,Ph.D.
單位: 長庚大學
現職: 電子工程系 教授
聯絡地址: 333桃園市龜山區文化一路259號
電話: 03-2118800 轉5785
E-mail: sidhu@mail.cgu.edu.tw

研究領域:
  • Nanoscale flash memory
  • Metal and interfaces
  • High-k dielectrics and nano-CMOS devices
  • Nanocrystals
  • Si/Ge nanowires

工作經歷:
2014/08~迄今 長庚大學電子工程學系/長庚大學電子工程學系/教授
2009/08~2014/07 長庚大學電子工程學系/長庚大學電子工程學系/副教授
2006/07~2009/07 長庚大學電子工程學系/長庚大學電子工程學系/助理教授
2004/08~2006/06 Industrial Technology Research Institute/Electronics and Electro-optical Res. Lab/Engineer
2003/02~2004/07 National Taiwan University/Department of Electronic Engineering/Post doc/
2001/09~2002/12 Seoul National University, South Korea/Material Science Engineering/Researcher


學歷:
Ph.D., Indian Institute of Technology, Kharagpur, India (1998/01~2003/02)
M. Sc., Vidyasagar University, Midnapore, West Bengal, India (1993-1995)


殊榮:
Invited Talks:

  • S. Maikap, “Challenges and opportunities of resistive random access memory”, The First International Conference on Emerging Materials: Characterization & Application (EMCA 2014), December 4 to 6, Kolkata, 2014, India.
  • S. Maikap, “Prospective and challenges of resistive switching memory devices”, Department of Electronics & Communications Engineering, National Institute of Technology (NIT), August 22, 2014, Durgapur, India.
  • S. Maikap, “Resistive switching memory using TaOx material”, Department of Physics and Meteorology, Indian Institute of Technology, January 27, Kharagpur, 2014, India.
  • S. Maikap and D. Jana, “GeOx based nanoscale resistive switching memories”,  International Union of Materials Research Societies-International Conference in Asia (IUMRS-ICA), IISc, Bangalore, 16-20 December, 2013, India.
  • S. Maikap and A. Prakash, “TaOx based nanoscale resistive switching memory using cross-point architecture”, 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), Amity University, Noida, 10-13 December,  2013, India.
  • S. Maikap   , “TaOx based resistive switching memories”, National Chiao Tung University”, October 28, 2013.
  • S. Maikap and A. Prakash, “TaOx Based Nanoscale Resistive Switching Memories”, Energy Materials Nanotechnology (EMN), East Meeting, 7-10 September, 2013, Beijing, China
  • S. Maikap, D. Jana, and W. Banerjee, “Nanoscale resistive switching memories”, 5th  IEEE International Nano Electronics Conference (IEEE INEC), January 2 to 4, Resorts World Sentosa, Singapore, p. 51, 2013.
  • S. Maikap, “Challenges of nanoscale nonvolatile memory devices”, The 7th International Conference on Advanced Material Processing (ICAMP), June 24 to 27, Howard International House, Taipei, Taiwan.
  • S. Maikap and S. Z. Rahaman, “Ge based resistive switching memories”, February 1, 2012, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.
  • S. Maikap, S. Z. Rahaman, W. Banerjee, and A. Prakash, “Germanium based materials for low power nanoscale resistive switching memory applications”, XVIth International Workshop on Physics of Semiconductor Devices (IWPSD), December 19-22, 2011, IIT Kanpur, India.
  • S. Maikap, W. Banerjee, and S. Z. Rahaman, “Atomic layer deposited nanoscale high κ/metal multilayers for CMOS and memory applications”, The 6th DAE BRNS National Symposium on Pulsed Laser Deposition of Thin Films and Nanostructured Materials (PLD-2011), November 9-11, 2011, Bangaluru, India.
  • S. Maikap, “ReRAM and CBRAM devices using AlOx and Ge based materials”, 1st International Workshop on Resistive RAM”, October 20th and 21st, 2011, IMEC (Interuniversity MicroElectronics Center), Leuven, Belgium.
  • S. Maikap and S. Z. Rahaman, “ Germanium based resistive switching memories”, Symposium on Nano Device Technology (SNDT)”, April 21-22, p. 19, 2011, Hsinchu, Taiwan.
  • S. Maikap and S. Z. Rahaman, “Bipolar resistive switching memory using Cu filament in Ge1-xSex solid electrolytes”, 1st International Workshop on Conductive Bridge Memory (CBRAM), April 23rd -24th, 2010, Stanford University, California.
  • S. Maikap, “Quantum dot based memories”, International Workshop on Emerging Non-volatile Memories, July 31st, 2009, Instituto Naozionale per la Fisica della Materia-Consiglio Nazionale delle Ricerche (NFM/CNR), Genova, Italy.
  • S. Maikap, “Atomic Layer Deposited High k Multilayer Quantum Wells for Nanoscale Nonvolatile Memory Applications”, November 20, 2008, Institute of Electro Optical Science and Technology, National Taiwan Normal University, Taiwan.
  • S. Maikap, “Atomic Layer Deposited High-k and Metal Nanocrystals for Nanoscale Nonvolatile Memory Applications”, October 15, 2008, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.
  • S. Maikap, “Memory Technologies”, November 19, 2007, Department of Materials Science Engineering, National Taiwan University, Taiwan

Committee member and session chair:

  • 2014 IEEE 3rd International Symposium on Next General Electronics, May 7-10, Chang Gung University, Taoyuan, Taiwan – Program and session Chairs on Memories
  • 2013 International Union of Materials Research Societies-International Conference in Asia (IUMRS-ICA), Indian Institute of Science (IISc), Bangalore, 16-20 December, India - Session Chair
  • 2013 5th  IEEE International Nano Electronics Conference (IEEE INEC), January 2 to 4, Resorts World Sentosa, Singapore – Session Chair
  • 2011 IEEE Nano Electronics Conference (INEC), Chang Gung University, Tao-Yuan, Taiwan – Session Chair

Awards:

  •  “Best poster award” R. Panja, D. Jana, and S. Maikap, “Enhanced CBRAM characteristics using Cu nanolayer in a novel W/Cu/Al2O3/TiN structure”, The First International Conference on Emerging Materials: Characterization & Application (EMCA 2014), Kolkata, India, December 4 to 6, 2014. (Financial supported by NSC-102-2221-E-182-057-MY2)
  • “Excellent poster award” Yi-Yan Chen, Writam Banerjee, S. Maikap, and Jer-Ren Yang, “The microstructure investigation of HfO2 thin film after post-annealing”, , IUMRS-ICA (12th International conference in Asia), 19 to 22 September, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3)
  • “Excellent paper award” S. Maikap, P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C.     Wang, L. S. Lee, T. C. Tien, S. C. Lo,  P. W. Li, M. J. Tsai, “High density and uniform ALD    TiN nanocrystal flash memory devices with large memory window and good retention”, Int.     Electron Devices and Materials Symposia (IEDMS), pp. 85-86, Tainan, Taiwan, 2006.

  • “Excellent Research and Innovation Award” S. Maikap, In recognition of participation in    Project “SiGe Buffer Free Compressively Strained Ge PFET on Si with Si Epi Passivation” Electronics  Research & Service Organization (ERSO), Industrial Technology Research Institute (ITRI),  Hsinchu, Taiwan, 28th June, 2005.


代表論文:

  1. S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao and M. J Tsai, “Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film”, Appl. Phys. Lett., vol. 101, p. 073106, 2012 (SCI) (Rank: 20/136; PHYSICS, APPLIED)
  2. W. Banerjee, S. Maikap, S. Z. Rahaman , A. Prakash, T. C. Tien, W. C. Li and J. R. Yang, “Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure”, Journal of the Electrochemical Society., vol. 159, pp. H177-H182, 2012. (SCI)  (Rank: 1/18; MATERIALS SCIENCE, COATINGS & FILMS)
  3. S. Maikap, S. Z. Rahaman, and T. C. Tien, “Nanoscale (EOT=5.6 nm) nonvolatile memory characteristics using n Si/SiO2/HfAlO nanocrystals/Al2O3/Pt capacitors”, IOP Nanotechnology, vol. 19, pp. 435202 (5 pages), 2008. (SCI) (Rank: 19/136; PHYSICS, APPLIED)
  4. S. Maikap, T. Y. Wang, H. Y. Lee, P.J. Tzeng, C. C. Wang, L. S. Lee, K. C. Liu, J. R. Yang and M. J. Tsai, “ Charge trapping characteristics of atomic layer deposited HfO2 films with Al2O3 as a blocking oxide for high density nonvolatile memory device applications” Semicond. Sci. Technol., vol. 22, pp. 884-889, 2007. (SCI ) (Rank: 53/248; ENGINEERING, ELECTRICAL AND ELECTRONIC)
  5. S. Maikap, T. Y. Wang, P. J. Tzeng,  C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, and M. J. Tsai, “Band offsets and charge storage characteristics of atomic layer deposited high-κ HfO2/TiO2 multilayers”, Appl. Phys. Lett., vol. 90, 262901, 2007. (SCI) (Rank: 20/136; PHYSICS, APPLIED)

所有論文著作一覽表

學會與認證:
Academic Teaching Rank Accreditation Certificate Professor