林瑞明 ,Ph.D. 
單位: 長庚大學 
現職: 電子工程系 教授
聯絡地址: 333桃園市龜山區文化一路259號
電話: 03-2118800 轉 5790 傳真: 03-2118507
E-mail: rmlin@mail.cgu.edu.tw
研究領域:
- 氮化合物磊晶成長技術Nitride-based Epitaxy
- 光電半導體元件(Opto-Electronic Material and Devices)
- 氮化鎵高功率元件(GaN High Power Devices)
工作經歷: 1997-1999 國科會企劃處副研究員, Assistant Research Fellow, Planning and Evaluation Division, National Science Council, Taiwan
1999-2002 長庚大學電子系助理教授, Assistant Professor, Dept. of Electronic Engineering, Chang Gung University, Taiwan
2002-2013 長庚大學電子系副教授, Associate Professor, Dept. of Electronic Engineering, Chang Gung University, Taiwan
2001-2006 長庚大學技術移轉中心主任, Director, Right and Technology Transfer Center, Chang Gung University
2010-2012 長庚大學綠科中心照明科技組召集人, Convener, Green Technology Research Center, Chang Gung University
學歷:
台灣大學電機工程研究所 博士
殊榮: - 91年度長庚大學 研究獎 (2002)
- 99年度長庚大學 技合獎 (2010)
- Research covered by 『Compound Semiconductor』, 『 Semiconductor Today 』 and 『 VerticalNews Electronics 』Magazine
- Compound Semiconductor, Sep 28, 2010: "Electron blocker boosts brightness in wide well LEDs"
- Semiconductor Today, January 27, 2011: "Exploring droop and wide well nitride LEDs"
- Compound Semiconductor, Feb 11, 2011: "Electron leakage can improve efficiency droop"
- Semiconductor Today, Sep 6, 2012: "Layer insertion to avoid nitride LED efficiency droop"
- Compound Semiconductor, Oct 12, 2012: " Inserting InGaN slashes LED droop "
- Semiconductor Today, Oct 29, 2013: "Palladium oxide interlayer cuts gate leakage in nitride HEMTs"
- VerticalNews Electronics, Oct 30, 2013: "Physical and Electrical Characteristics of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors With Rare Earth Er2O3 as a Gate Dielectric "
代表論文:- Ray-Ming Lin* and Jen-Chih Li, “Side wall wet etching improves the efficiency of gallium nitride light emitting diodes”, Journal of the Electrochemical Society, Vol. 159 Issue 4, pp. H433-H439 ( 2012).
- Ray-Ming Lin*, Sheng-Fu Yu, Shoou-Jinn Chang, Tsung-Hsun Chiang, Sheng-Po Chang, and Chang-ho Chen, “Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes” APPLIED PHYSICS LETTERS, Vol.101, pp.081120, 24 August (2012).
- Jui-Fen Chien, Hua-Yang Liao, Sheng-Fu Yu, Ray-Ming Lin, Makoto Shiojiri, Jing-Jong Shyue, and Miin-Jang Chen, Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique, ACS Applied Materials and Interfaces, Vol. 5 Issue 2, pp. 227-232, (2013).
- Atanu Dasa, Danny Hsu Koa, Chia-Hsin Chena, Liann-Be Chang, Chao-Sung Laia, Fu-Chuan Chua, Lee Chowb, Ray-Ming Lin*, “Highly Sensitive Palladium Oxide Thin Film Extended Gate FETs as pH Sensor”, Sensors and Actuators B 205 (2014) 199–205, September 2014, Sensors and Actuators B: Chemical (2014).
- Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, Yu-Pin Lan, Ching-Hsueh Chiu, Gou-Chung Chi,Chi-Hsiang Chen, Hao-Chung Kuo, Ray-Ming Lin* and Chun-Yen Chang, “Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate”, Nanoscale Research Letters, 9:505,Sep. (2014).
所有論文著作一覽表
目前進行中研究計畫:2014/5/1-2017/4/30 氮化合物磊晶於碳化矽基板技術開發