Expertise at Chang Gung System

Siddheswar Maikap ,Ph.D.
Institution: Chang Gung University
Position: Professor
Department: Department of Electronic Engineering
Address: 259 Wen-Hwa 1st Road, Guishan Dist. 33302, Taoyuan, Taiwan
Tel: +886-3-3281200 ext.5785 Fax:+886-3-3284262
E-mail: sidhu@mail.cgu.edu.tw

Focus of Interest:
  • Memory technologies
  • Metal and interfaces
  • High-k dielectrics and CMOS process
  • Semiconductors
  • Nanostructures
  • Biosensors

Fulltime Employment:
  • 2014/08~ till date, Chang Gung University/Department of Electronics Engineering/Professor
  • 2016/01-till date, Linkou Chang Gung Memorial Hospital/Department of Obstetrics-Gynecology/Researcher
  • 2009/08~2014/07, Chang Gung University/Department of Electronics Engineering/Associate Professor
  • 2006/07~2009/07, Chang Gung University/Department of Electronics Engineering/Assistant Professor
  • 2004/08~2006/06, Industrial Technology Research Institute/Electronics and Electro-optical Res. Lab/Engineer
  • 2003/02~2004/07, National Taiwan University/Department of Electronic Engineering/Post doc
  • 2001/09~2002/12, Seoul National University, South Korea/Material Science Engineering/Researcher

Education:
  • Ph.D., Indian Institute of Technology, Kharagpur, India (1998/01~2003/02)
  • M. Sc., Vidyasagar University, Midnapore, West Bengal, India (1993-1995)

Honor and Awards:
Keynote / Invited Talks:

  • S. Maikap, “Al2O3 based resistive switching random access memory for H2O2/glucose sensing”, IndoTaiwan Bilateral Seminar (Electron Devices and Solid State Circuits), National Nano Device Laboratories (NDL), December 27-28, 2017, Hsinchu, Taiwan. (Invited)
  • S. Maikap, Chemical etched Si nanowires and porous IrOx/NiOx membrane for uric acid, LOXL2 breast cancer, and prostate cancer biomarker detection”The 2nd International Conference on Emerging Materials: Characterization & Application (EMCA), March 15-17, NIT Durgapur, India, 2017.(Invited)
  • S. Maikap,“Cross point Resistive switching memory devices for bio medical applications”, NIT Durgapur, India, 18th November, 2016. (Invited)
  • S. Maikap, “Resistive random access memory: A great future in memory technology”, International Conference on Computational Science and Engineering (ICCSE), October 4-6, 2016, Kolkata, India. (Keynote)
  • S. Maikap,“Resistive switching memory arrays and its medical applications”, 1st International Conference on Advancement of Computer Communication and Electrical Technology (ACCET), October 20-22, 2016, Murshidabad, India. (Invited)
  • S. Maikap, “Resistive switching memory for new applications”, Energy Material Nanotechnology (EMN), April 21-25, 2016, (Invited)
  • S. Maikap, “Nonvolatile memory for biosensor applications”, International Conference on Microelectronics, Computing, and Communication (MICROCOM), January 23 to 25, NIT Durgapur, India, 2016. (Keynote)
  • S. Maikap, P. Kumar, G. Sreekanth, S. Samanta, S. Chakrabarti, and D. Jana, “Cross-point resistive switching memory devices for bio medical applications”, 18th International Workshop on the Physics ofSemiconductor Devices (IWPSD), Indian Institute of Science (IISc), Bengalore, 7-10 December, 2015, India.(Invited)
  • S. Maikap, S. Chakrabarti, and D. Jana, “Prospective and challenges of RRAM devices”, Energy Materials Nanotechnology (EMN), East Meeting, 20 to 23April, 2015,Chinese Academy of Science (CAS), Beijing, China. (Invited)
  • S. Maikap, “Challenges and opportunities of resistive random access memory”, The First International Conference on Emerging Materials: Characterization & Application (EMCA 2014), December 4 to 6, Kolkata, 2014, India.
  • S. Maikap, “Prospective and challenges of resistive switching memory devices”, Department of Electronics & Communications Engineering, National Institute of Technology (NIT), August 22, 2014, Durgapur, India.
  • S. Maikap, “Resistive switching memory using TaOx material”, Department of Physics and Meteorology, Indian Institute of Technology, January 27, Kharagpur, 2014, India.
  • S. Maikap and D. Jana, “GeOx based nanoscale resistive switching memories”,  International Union of Materials Research Societies-International Conference in Asia (IUMRS-ICA), IISc, Bangalore, 16-20 December, 2013, India.
  • S. Maikap and A. Prakash, “TaOx based nanoscale resistive switching memory using cross-point architecture”, 17th International Workshop on the Physics of Semiconductor Devices (IWPSD), Amity University, Noida, 10-13 December,  2013, India.
  • S. Maikap   , “TaOx based resistive switching memories”, National Chiao Tung University”, October 28, 2013.
  • S. Maikap and A. Prakash, “TaOx Based Nanoscale Resistive Switching Memories”, Energy Materials Nanotechnology (EMN), East Meeting, 7-10 September, 2013, Beijing, China
  • S. Maikap, D. Jana, and W. Banerjee, “Nanoscale resistive switching memories”, 5th  IEEE International Nano Electronics Conference (IEEE INEC), January 2 to 4, Resorts World Sentosa, Singapore, p. 51, 2013.
  • S. Maikap, “Challenges of nanoscale nonvolatile memory devices”, The 7th International Conference on Advanced Material Processing (ICAMP), June 24 to 27, Howard International House, Taipei, Taiwan.
  • S. Maikap and S. Z. Rahaman, “Ge based resistive switching memories”, February 1, 2012, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.
  • S. Maikap, S. Z. Rahaman, W. Banerjee, and A. Prakash, “Germanium based materials for low power nanoscale resistive switching memory applications”, XVIth International Workshop on Physics of Semiconductor Devices (IWPSD), December 19-22, 2011, IIT Kanpur, India.
  • S. Maikap, W. Banerjee, and S. Z. Rahaman, “Atomic layer deposited nanoscale high κ/metal multilayers for CMOS and memory applications”, The 6th DAE BRNS National Symposium on Pulsed Laser Deposition of Thin Films and Nanostructured Materials (PLD-2011), November 9-11, 2011, Bangaluru, India.
  • S. Maikap, “ReRAM and CBRAM devices using AlOx and Ge based materials”, 1st International Workshop on Resistive RAM”, October 20th and 21st, 2011, IMEC (Interuniversity MicroElectronics Center), Leuven, Belgium.
  • S. Maikap and S. Z. Rahaman, “ Germanium based resistive switching memories”, Symposium on Nano Device Technology (SNDT)”, April 21-22, p. 19, 2011, Hsinchu, Taiwan.
  • S. Maikap and S. Z. Rahaman, “Bipolar resistive switching memory using Cu filament in Ge1-xSex solid electrolytes”, 1st International Workshop on Conductive Bridge Memory (CBRAM), April 23rd -24th, 2010, Stanford University, California.
  • S. Maikap, “Quantum dot based memories”, International Workshop on Emerging Non-volatile Memories, July 31st, 2009, Instituto Naozionale per la Fisica della Materia-Consiglio Nazionale delle Ricerche (NFM/CNR), Genova, Italy.
  • S. Maikap, “Atomic Layer Deposited High k Multilayer Quantum Wells for Nanoscale Nonvolatile Memory Applications”, November 20, 2008, Institute of Electro Optical Science and Technology, National Taiwan Normal University, Taiwan.
  • S. Maikap, “Atomic Layer Deposited High-k and Metal Nanocrystals for Nanoscale Nonvolatile Memory Applications”, October 15, 2008, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.
  • S. Maikap, “Memory Technologies”, November 19, 2007, Department of Materials Science Engineering, National Taiwan University, Taiwan

Awards:

  • “Outstanding Reviewer Awards” S. Maikap, Nanotechnology, IOP publishing, 2016.
  • “Best paper award” M. Dutta, P. Kumar, G. Sreekanth, and S. Maikap, “IrOx nano-structure for controlling resistive switching memory and breast cancer detection”, IEEE Conference on Microelectronics, Computing and Communication (MicroCom), NITDurgapur, 23-25 January, 2016, India.(Financial supported by MOST-104-2221-E-182-075)
  • “Best poster award” R. Panja, D. Jana, andS. Maikap, “Enhanced CBRAM characteristics using Cu nanolayer in a novel W/Cu/Al2O3/TiN structure”, The First International Conference on Emerging Materials: Characterization & Application (EMCA 2014), Kolkata, India, December 4 to 6, 2014. (Financial supported by NSC-102-2221-E-182-057-MY2)
  • “Excellent poster award” Yi-Yan Chen, Writam Banerjee, S. Maikap, and Jer-Ren Yang, “The microstructure investigation of HfO2 thin film after post-annealing”, , IUMRS-ICA (12th International conference in Asia), 19to 22 September, 2011.(Financial supported by NSC-97-2221-E-182-051-MY3)
  • “Excellent paper award” S. Maikap, P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, T. C. Tien, S. C. Lo, P. W. Li, M. J. Tsai, “High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention”, Int. Electron Devices and Materials Symposia (IEDMS), pp. 85-86, Tainan, Taiwan, 2006.
  • “Excellent Research and Innovation Award” S. Maikap, In recognition of participation in Project “SiGe Buffer Free Compressively Strained Ge PFET on Si with Si Epi Passivation” Electronics Research & Service Organization (ERSO), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, 28thJune, 2005.

Committee member and session chair:

  • 2017 The 13th IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), Hsinchu, Taiwan, October 18-20. Session Chair.
  • 2017The 2nd International Conference on Emerging Materials: Characterization & Application (EMCA), March 15 to 17, NIT Durgapur, India.Committee Member and Session Chair.
  • 2016 Energy Material Nanotechnology (EMN), April 21 to25, Beijing, China. Session Chair.
  • 2016 International Conference on Microelectronics, Computing, and Communication (MICROCOM), January 23 to 25, NIT Durgapur, India. Committee Member and Session Chair.
  • 2015 Energy Materials Nanotechnology (EMN), East Meeting, 20 to 23 April, 2015, Chinese Academy of Science (CAS), Beijing, China- Session chair on Nanotechnology
  • 2014 IEEE 3rd International Symposium on Next General Electronics, May 7-10, Chang Gung University, Taoyuan, Taiwan –Program and session Chairs on Memories
  • 2013 International Union of Materials Research Societies-International Conference in Asia (IUMRS-ICA), Indian Institute of Science (IISc), Bangalore, 16-20 December, India -Session Chair
  • 2013 5th IEEE International Nano Electronics Conference (IEEE INEC), January 2 to 4, Resorts World Sentosa, Singapore – Session Chair
  • 2011 IEEE Nano Electronics Conference (INEC), Chang Gung University, Tao-Yuan, Taiwan – Session Chair

Selected Main Publications:
  1. S. Samanta, S. Maikap, A. Roy, S. Jana and J. T. Qiu, “Effect of W/Ir top electrode on resistive switching and dopamine sensing by using optimized TaOx based memory platform” Advanced Materials Interfaces, vol. 4, p. 1700959 (11 pages), 2017. (SCI)
  2. S. Chakrabarti, S. Maikap, S. Samanta, S. Jana, A. Roy, J. T. Qiu, “Scalable cross point resistive switching memory and mechanism through understanding of H2O2/glucose sensing by using IrOx/Al2O3/W structure”, Phys. Chem. Chem. Phys., vol. 19, pp. 25938-25948, 2017. (SCI)
  3. S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film”, Appl. Phys. Lett., vol. 101, 073106 (5 pages), 2012.(SCI)
  4. S. Maikap, T. Y. Wang, H. Y. Lee, P.J. Tzeng, C. C. Wang, L. S. Lee, K. C. Liu, J. R. Yang and M. J. Tsai, “ Charge trapping characteristics of atomic layer deposited HfO2 films with Al2O3 as a blocking oxide for high density nonvolatile memory device applications” Semicond. Sci. Technol., vol. 22, pp. 884-889, 2007. (SCI)
  5. S. Maikap, T. Y. Wang, P. J. Tzeng, C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, and M. J. Tsai, “Band offsets and charge storage characteristics of atomic layer deposited high κ HfO2/TiO2 multilayers”, Appl. Phys. Lett., vol. 90, 262901, 2007. (SCI)

All Publications List

Board Certification:
  • Academic Teaching Rank Accreditation Certificate Professor

Ongoing Projects:
  • Prostate cancer biomarker detection by using Si nanowire field-effect transistor